收藏本站
NTTS2P03R2
Power MOSFET
?2.48 Amps, ?30 Volts
P?Channel Enhancement Mode
Single Micro8 t Package
Features
? Ultra Low R DS(on)
? Higher Efficiency Extending Battery Life
? Miniature Micro8 Surface Mount Package
? Diode Exhibits High Speed, Soft Recovery
? Micro8 Mounting Information Provided
? Pb?Free Package is Available
Applications
? Power Management in Portable and Battery?Powered Products,
i.e.: Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
http://onsemi.com
?2.48 AMPERES
?30 VOLTS
85 m W @ V GS = ?10 V
Single P?Channel
D
G
Rating
Symbol
Value
Unit
Drain?to?Source Voltage
Gate?to?Source Voltage ? Continuous
V DSS
V GS
?30
" 20
V
V
S
Thermal Resistance,
Junction?to?Ambient (Note 1)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Continuous Drain Current @ T A = 70 ° C
R q JA
P D
I D
I D
160
0.78
?2.48
?1.98
° C/W
W
A
A
8
1
Micro8
CASE 846A
STYLE 1
Thermal Resistance,
Junction?to?Ambient (Note 2)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Continuous Drain Current @ T A = 70 ° C
R q JA
P D
I D
I D
70
1.78
?3.75
?3.0
° C/W
W
A
A
MARKING DIAGRAM
& PIN ASSIGNMENT
Thermal Resistance,
Source
1
8
Drain
Junction?to?Ambient (Note 3)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Continuous Drain Current @ T A = 70 ° C
R q JA
P D
I D
I D
210
0.60
?2.10
?1.67
° C/W
W
A
A
Source
Source
Gate
2
3
4
7
6
5
Drain
Drain
Drain
Pulsed Drain Current (Note 5)
I DM
?17
A
(Top View)
Thermal Resistance ,
Junction?to?Ambient (Note 4)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Continuous Drain Current @ T A = 70 ° C
Pulsed Drain Current (Note 5)
Operating and Storage
Temperature Range
R q JA
P D
I D
I D
I DM
T J , T stg
100
1.25
?3.02
?2.42
?24
?55 to
+150
° C/W
W
A
A
A
° C
WW = Work Week
AE = Device Code
G = Pb?Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Maximum ratings are those values beyond which device damage can occur.
Device
Package
Shipping ?
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Minimum FR?4 or G?10 PCB, Time ≤ 10 Seconds.
2. Mounted onto a 2 ″ square FR?4 Board (1 ″ sq. 2 oz Cu 0.06 ″ thick single sided),
Time ≤ 10 Seconds.
3. Minimum FR?4 or G?10 PCB, Steady State.
4. Mounted onto a 2 ″ square FR?4 Board (1 ″ sq. 2 oz Cu 0.06 ″ thick single sided),
Steady State.
5. Pulse Test: Pulse Width = 300 m s, Duty Cycle = 2%.
NTTS2P03R2 Micro8 4000/Tape & Reel
NTTS2P03R2G Micro8 4000/Tape & Reel
(Pb?Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2005
June, 2005 ? Rev. 2
1
Publication Order Number:
NTTS2P03R2/D
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NTUD3127CT5G MOSFET N/P-CH 20V SOT-963
NTUD3128NT5G MOSFET N-CH DUAL 20V SOT-963
NTUD3129PT5G MOSFET P-CH DUAL 20V SOT-963
NTUD3169CZT5G MOSFET N/P-CH 20V SOT-963
NTUD3170NZT5G MOSFET N-CH DUAL 20V SOT-963
NTUD3171PZT5G MOSFET P-CH DUAL 20V SOT-963
NTY100N10G MOSFET N-CH 100V 123A TO-264
NTZD3152PT5G MOSFET P-CHAN DUAL 20V SOT-563
相关代理商/技术参数
NTTS2P03R2/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET -2.48 Amps， -30 Volts
NTTS2P03R2_05 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -2.48 Amps, -30 Volts
NTTS2P03R2G 功能描述:MOSFET -30V -2.48A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTUD01N02/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 100 mAmps， 20 Volts
NTUD3127C 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 20 V, 200 mA / −180 mA, Complementary, 1.0 x 1.0 mm SOT−963 Package
NTUD3127CT5G 功能描述:MOSFET ZEN REG 0.5W 2.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTUD3128N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 20 V, 200 mA, Dual N-Channel, 1.0 mm x 1.0 mm SOT-963 Package
NTUD3128NT5G 功能描述:MOSFET SMALL SIGNAL MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube